Preparación y caracterización estructural del nuevo semiconductor tipo-diamante CuMnInSe3

  • Gerzon Delgado Universidad del Zulia
  • Pedro Grima-Gallardo Laboratorio de Cristalografía, Departamento de Química, Facultad de Ciencias, Universidad de Los Andes - Venezuela
  • Miguel Quintero Laboratorio de Cristalografía, Departamento de Química, Facultad de Ciencias, Universidad de Los Andes - Venezuela
  • Cecilia Chacón Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada-Instituto Politécnico Nacional - México

Abstract

El compuesto calcogenuro CuMnInSe3 , perteneciente al sistema I-II-III-VI3 , ha sido investigado mediante difracción de rayos-X en muestras policristalinas y su estructura cristalina ha sido refinada utilizando el método Rietveld. El patrón de polvo se compone de 85,3 % de la fase principal CuMnInSe3 y 14,7 % de la fase secundaria MnSe. Este material cristaliza con una estructura tipo CuFeInSe3 en el grupo espacial P 4 2c, (N° 112), con parámetros de celda unidad a = 5,7907(5) Å, c = 11,648(1) Å, V = 390,58(8) Å3 .

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Published
2017-12-31
How to Cite
Delgado, G., Grima-Gallardo, P., Quintero, M. and Chacón, C. (2017) “Preparación y caracterización estructural del nuevo semiconductor tipo-diamante CuMnInSe3”, Revista Técnica de la Facultad de Ingeniería. Universidad del Zulia, 41(1), pp. 25-31. Available at: https://mail.produccioncientificaluz.org/index.php/tecnica/article/view/23146 (Accessed: 29December2024).
Section
Review paper